All Solution Processable OTFT-Based on Direct-Written Printing Method Towards Flexible Electronics Applications

Authors

  • Nur Syahadah Yusof
  • Mohamed Fauzi Packeer Mohamed School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
  • Nor Azlin Ghazali School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
  • Muhammad Firdaus Akbar Jalaludin Khan School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
  • Mohd Zamir Pakhuruddin Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM, Pulau Pinang, Malaysia
  • Safizan Shaari Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia

DOI:

https://doi.org/10.37934/araset.41.2.93101

Keywords:

Organic thin film transistor, Direct-write printing, TIPS-PEN, Semiconductor devices

Abstract

Development of organic electronics, particularly organic thin film transistors (OTFTs), have been centred of discussion among researchers due to their potential uses in flexible electronics applications. Conventionally, an inkjet printing method has been deployed to fabricate the OTFTs due to its simplicity in fabrication steps and applicability to diverse substrates and solution-processable materials. Nonetheless, this technique has a major drawback which requires low viscosity materials to prevent clogging issue at the printer’s nozzle. This in return limits the material selections and requires additional steps i.e. modification of the selected materials to fit the printer’s requirement or in other words, to avoid clogging at the nozzle.  Therefore, this paper proposes a method to fabricate a bottom gate bottom contact (BGBC) OTFT by using a direct-write printing technique which is compatible with a commercial conductive ink that can be directly used without any further modification. This technique does not compromise the fabricated devices overall performance and can fabricate the devices up to micrometre scale. The proposed OTFT achieved a saturation mobility of 4.28x10-5 cm2/Vs, a threshold voltage of -0.4 V, an on/off current ratio of 102, and a subthreshold swing of 10 V/dec with overall fabrication temperature is less than 150 ℃, hence, makes it suitable for flexible electronics applications.

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Author Biographies

Mohamed Fauzi Packeer Mohamed, School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia

fauzi.packeer@usm.my

Nor Azlin Ghazali, School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia

azlin.ghazali@usm.my

Muhammad Firdaus Akbar Jalaludin Khan, School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia

firdaus.akbar@usm.my

Mohd Zamir Pakhuruddin, Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 USM, Pulau Pinang, Malaysia

zamir@usm.my

Safizan Shaari, Faculty of Electronic Engineering Technology, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia

safizan@unimap.edu.my

Published

2024-03-20

Issue

Section

Articles