Comparison of Non-Linear Impedance AC Response of 10 and 20 Multiple Quantum Wells (MQWs) p-i-n Diode with DBR Towards Low Leakage Current Generation of Optoelectronic Device

Authors

  • Nur Fadzilah Basri Department of Physics, Faculty of Applied Science and Technology, Universiti Tun Hussein Onn Malaysia, Pagoh Higher Education Hub, 84600 Muar, Johor, Malaysia
  • Afishah Alias Department of Physics, Faculty of Applied Science and Technology, Universiti Tun Hussein Onn Malaysia, Pagoh Higher Education Hub, 84600, Muar, Johor, Malaysia
  • Megat Muhammad Ikhsan Megat Hasnan Electric and Electronics Department, Faculty of Engineering, Universiti Malaysia Sabah, 88400 Kota Kinabalu, Sabah, Malaysia
  • Mohammad Syahmi Nordin MT Data Driven Sdn. Bhd., Laurel Laman View, 63000 Cyberjaya, Selangor, Malaysia
  • Fahrettin Sarcan Nano and Optoelectronic Research Laboratories, Physics Department, Science Faculty, Istanbul University, 34134 Vezneciler, Istanbul, Turkey
  • Khairul Anuar Mohamad Microelectronic and Nanotechnology – Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Parit Raja, 86400 Batu Pahat, Johor, Malaysia

Keywords:

Multi-quantum wells (MQWs), Leakage current, Impedance spectroscopy

Abstract

This study explores the leakage current behaviour in multi-quantum well (MQW) devices using dielectric analysis. MQWs integrated with distributed Bragg reflector (DBR) show promise in enhancing optoelectronic device performance. Impedance spectroscopy and dark current-voltage measurements were conducted on 10 MQWs and 20 MQWs. The results indicate that 20 MQWs exhibit lower dielectric loss and leakage current compared to 10 MQWs. Understanding and minimizing resistive and polarization losses can improve the power efficiency and signal quality of optoelectronic devices. These findings demonstrate the importance of dielectric analysis for optimizing MQW-based optoelectronic devices.

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Author Biographies

Nur Fadzilah Basri, Department of Physics, Faculty of Applied Science and Technology, Universiti Tun Hussein Onn Malaysia, Pagoh Higher Education Hub, 84600 Muar, Johor, Malaysia

dilabasri@ums.edu.my

Afishah Alias, Department of Physics, Faculty of Applied Science and Technology, Universiti Tun Hussein Onn Malaysia, Pagoh Higher Education Hub, 84600, Muar, Johor, Malaysia

afishah@uthm.edu.my

Megat Muhammad Ikhsan Megat Hasnan, Electric and Electronics Department, Faculty of Engineering, Universiti Malaysia Sabah, 88400 Kota Kinabalu, Sabah, Malaysia

megatikhsan@ums.edu.my

Mohammad Syahmi Nordin, MT Data Driven Sdn. Bhd., Laurel Laman View, 63000 Cyberjaya, Selangor, Malaysia

imhays179@gmail.com

Fahrettin Sarcan, Nano and Optoelectronic Research Laboratories, Physics Department, Science Faculty, Istanbul University, 34134 Vezneciler, Istanbul, Turkey

fahrettin.sarcan@istanbul.edu.tr

Khairul Anuar Mohamad, Microelectronic and Nanotechnology – Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Parit Raja, 86400 Batu Pahat, Johor, Malaysia

khairulam@uthm.edu.my

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Published

2024-12-19

Issue

Online First Articles

Section

Articles

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