Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

Abstract

This work presents the development and fabrication process of a radiation dosimeter based on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology, known as RadFET. The aim of this study is to determine the specifications of the RadFET sensor for use in space missions by the Egyptian Space Agency in SPNeX mission. We have successfully determined the sensor specifications, specified the required electronic components for readout circuits, and confirmed the correct operation of the RadFET device through device simulations and radiation-induced damage models. The fabrication process was conducted at Zewail City of Science, Technology and Innovation cleanroom facility, utilizing Sentaurus TCAD for device and process simulations. We have conducted fabrication experiments for phosphorus spin-on dopant application, dry oxide growth, and wet oxidation using water vapor bubblers. The dosimeter readout PCB fabrication and assembly phases have been successfully completed. The developed RadFET dosimeter holds great promise for radiation monitoring in space missions, ensuring enhanced safety and reliability of electronic systems.