Design of Class E CMOS Power Amplifier with Integrated Active Inductor for 5G Applications

Sohiful Anuar Zainol Murad; Ahmad Fariz   Hasan; Rohana   Sapawi; Arjuna   Marzuki; Jamilah   Karim; Zhao Ying Lee; Prapto   Nugroho

doi:10.37934/araset.63.2.5666

Authors

Sohiful Anuar Zainol Murad Centre of Excellence for Micro System Technology (MiCTEC), Universiti Malaysia Perlis (UniMAP), 02600 Arau, Perlis, Malaysia.
Ahmad Fariz Hasan Faculty of Electronic Engineering & Technology, Universiti Malaysia Perlis (UniMAP), 02600 Arau, Perlis, Malaysia
Rohana Sapawi Faculty of Engineering, Universiti Malaysia Sarawak (UNIMAS), 94300 Kota Samarahan Sarawak, Malaysia
Arjuna Marzuki School of Science and Technology, Wawasan Open University, 10050 George Town, Penang, Malaysia
Jamilah Karim College of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
Zhao Ying Lee Faculty of Electronic Engineering & Technology, Universiti Malaysia Perlis (UniMAP), 02600 Arau, Perlis, Malaysia
Prapto Nugroho Department of Electrical and Information Engineering, Faculty of Engineering, Universitas Gadjah Mada, 55281, Yogyakarta, Indonesia

DOI:

https://doi.org/10.37934/araset.63.2.5666

Keywords:

Class E, power amplifier, active inductor, CMOS, passive inductor, power added efficiency

Abstract

This paper presents a design of class E power amplifier (PA) with integrated active inductor for 5G applications. A high Q-factor active inductor (AI) is proposed utilizing CMOS 0.18-µm technology. A Gyrator-C based is employed to realize an active inductor with a double cascode resistive feedback configuration. The biasing voltage of 1.21 V, current source of 0.5 mA and supply voltage of 2.5 V is used. In order to obtain high efficiency, the proposed AI is implemented in a class E power amplifier by replacing on of the spiral inductors. According to the simulation results, the proposed AI can reach a high Q-factor of 50,000 and an inductance of 2.03 nH at 3.5 GHz. The power added efficiency (PAE) of CMOS class E PA with integrated AI, according to simulation result, is 72 % at 3.5 GHz. The intended PA's PAE was dramatically raised by the class E AI that was built.