Design of Concurrent Dual Band Low Noise Amplifier for WLAN Applications

Anishaziela   Azizan; Sohiful Anuar Zainol   Murad; Ahmad Fariz   Hasan; Asrulnizam   Abd Manaf; Prapto   Nugroho

doi:10.37934/araset.63.1.146152

Authors

Anishaziela Azizan Faculty of Electronic Engineering & Technology (FKTEN), Universiti Malaysia Perlis (UniMAP) 02600, Arau Perlis, Malaysia
Sohiful Anuar Zainol Murad Advanced Communication Engineering, Centre of Excellence (CoE), Faculty of Electronic Engineering & Technology (FKTEN), Universiti Malaysia Perlis (UniMAP), 02600, Arau Perlis, Malaysia
Ahmad Fariz Hasan Advanced Communication Engineering, Centre of Excellence (CoE), Faculty of Electronic Engineering & Technology (FKTEN), Universiti Malaysia Perlis (UniMAP), 02600, Arau Perlis, Malaysia
Asrulnizam Abd Manaf School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Pulau Pinang, Malaysia
Prapto Nugroho Department of Electrical and Information Engineering, Faculty of Engineering, Universitas Gadjah Mada, 55281, Yogyakarta, Indonesia

DOI:

https://doi.org/10.37934/araset.63.1.146152

Keywords:

Dual band, low noise amplifier, forward body bias, WLAN

Abstract

This paper presents a dual band LNA CMOS designed for a Wireless Local Area Network (WLAN) application using CMOS 0.13-µm Silterra technology. The proposed design incorporates forward body bias technique with cascode and notch filter configuration to achieve both low power consumption and high gain. The simulation results demonstrate a total power consumption of 2.39 mW at a low supply voltage of 0.5 V, with a gain of 16 dB at 2.4 GHz and 12 dB at 5.2 GHz. Additionally, input return loss of -12.3 dB and -14.2 dB with noise figures of 2.93 dBm and 4.23 dBm were obtained at 2.4 GHz and 5.2 GHz, respectively. Overall, this research contributes to the development of dual band LNA designs for WLAN applications.