Review of Low Dark Current of Lateral PIN SOI Photodiode for Energy Harvesting Application

Abstract

The photodetectors family plays an important role in many applications, including for energy harvesting. Extensive research and ongoing development of photodetectors have enriched their functionality and increased their performance. Combining SOI technology with Lateral PIN diode structure, they provide high isolation, low leakage current, and high speed, making them ideal for low light levels and noise-sensitive applications. Although Lateral Silicon-On-Insulator (SOI) PIN diodes have unique characteristics that can be useful in various applications, especially in RF applications, their fabrication and modelling are quite complicated. Meanwhile, a diode with poorly passivated surfaces may have many surface trap centres that contribute to additional dark currents by increasing the recombination of electron-hole pairs. The innovation continues and alters the concept to lessen dark current as of this research. We selectively review the research of SOI-based Lateral PIN photodiode from the point of view of principle and operating performance to obtain optimal dark current values. Silicon photodiodes with a conventional PIN structure are discussed.