Cylindrical Dielectric Resonator as Dielectric Matching on Microwave Amplifier for the Unconditionally Stable and Conditionally Stable Transistor at 5 GHz Frequency

Authors

  • Rashidah Che Yob Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia
  • Nor Muzlifah Mahyuddin School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia
  • Mohd Fadzil Ain School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia
  • Mohd Aminuddin Jamlos Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia
  • Nur Hidayah Ramli Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia
  • Norfatihah Bahari Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia
  • Mohd Wafi Nasrudin Advanced Computing, Centre of Excellent, Universiti Malaysia Perlis, Perlis, Malaysia
  • Liyana Zahid Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia

DOI:

https://doi.org/10.37934/araset.29.1.3045

Keywords:

Amplifier, Cylindrical Dielectric Resonator, Microwave Systems, Stability Performances

Abstract

Stability and matching techniques on microwave amplifier have been an important consideration to maintain their required performances, but typically its frequency dependent. Thus, a frequency variable mechanism is required. The dielectric matching employing the stability and matching techniques on microwave amplifier with cylindrical dielectric resonator has been investigated and realized. The cylindrical dielectric resonator (CDR) with parallel microstrip lines is proposed at 5 GHz frequency for unconditionally stable and conditionally stable transistor as dielectric matching. Hence, the proposed dielectric resonator with +2 mm spacing and 155˚ of curved configuration indicated the best performances for preliminary study. The result improves the performance of the parallel inhomogeneous CDR by 9.77%. Subsequently, the homogeneous CDR is also successfully working as the variable frequency mechanism for unconditionally stable and conditionally stable transistor at 5 GHz frequency in maintaining their stability performances.

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Author Biographies

Rashidah Che Yob, Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia

rashidahcheyob@unimap.edu.my

Nor Muzlifah Mahyuddin, School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia

eemnmuzlifah@usm.my

Mohd Fadzil Ain, School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia

eemfadzil@usm.my

Mohd Aminuddin Jamlos, Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia

mohdaminudin@unimap.edu.my

Nur Hidayah Ramli, Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia

hidayahramli@unimap.edu.my

Norfatihah Bahari, Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia

norfatihah@unimap.edu.my

Mohd Wafi Nasrudin, Advanced Computing, Centre of Excellent, Universiti Malaysia Perlis, Perlis, Malaysia

wafi@unimap.edu.my

Liyana Zahid, Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, Perlis, Malaysia

livanazahid@unimap.edu.my

Published

2022-12-29

Issue

Section

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