Investigation of Copper(I)Thiocyanate (CuSCN) as a Hole  Transporting Layer for Perovskite Solar Cells Application

Ahmad Nizamuddin; Faiz Arith; Ing Jia Rong; Muhammad Zaim; A Shamsul Rahimi; Shahrizal Saat

Authors

Ahmad Nizamuddin Faculty of Electrical and Electronic Engineering Technology (FTKEE), Universiti Teknikal Malaysia Melaka (UTeM), Melaka, Malaysia
Faiz Arith Faculty of Electronic and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka (UTeM), Melaka, Malaysia
Ing Jia Rong Faculty of Electronic and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka (UTeM), Melaka, Malaysia
Muhammad Zaim Faculty of Manufacturing Engineering (FKP), Universiti Teknikal Malaysia Melaka (UTeM), Melaka, Malaysia
A Shamsul Rahimi Faculty of Electrical and Electronic Engineering Technology (FTKEE), Universiti Teknikal Malaysia Melaka (UTeM), Melaka, Malaysia
Shahrizal Saat Faculty of Electrical and Electronic Engineering Technology (FTKEE), Universiti Teknikal Malaysia Melaka (UTeM), Melaka, Malaysia

Keywords:

CuSCN, Hole transporting layer, Perovskite solar cells

Abstract

Copper(I) Thiocyanate (CuSCN) is an inorganic hole transporting layer (HTL) used in perovskite solar cells (PSC). This material offers higher stability and reliability compared to conventional HTL. In this work, for depositing CuSCN (inorganic compound) we were using spin coating technique. The annealing temperature of CuSCN is varied in order to analyze the structural and electrical characteristics. The structural characteristics are determined by scanning electron microscopy (SEM), Raman spectroscopy and X-ray diffraction (XRD). Meanwhile, the electrical characteristic is measured by the I-V characteristics measurement. SEM images show the material surface features such as crystallinity morphology and density. XRD and Raman spectroscopy are used to confirm the coated surface on the ITO substrate is CuSCN. Besides, the I-V characteristic reveals that the conductivity with respect to annealing temperature. As a result, the optimized annealing temperature of CuSCN is 80 °C and showing conductivity of 62.96 S/m. In conclusion, CuSCN has a significant conductivity, hence suitable for the application as the HTL for perovskite solar cells.